Hydrogen sensing properties of a Pd/oxide/InAlAs metamorphic-based transistor

  • Tsai T
  • Chen H
  • Chen T
 et al. 
  • 5

    Readers

    Mendeley users who have this article in their library.
  • 9

    Citations

    Citations of this article.

Abstract

A Pd/oxide/InAlAs metal-oxide-semiconductor (MOS) type metamorphic high electron mobility transistor (MHEMT)-based hydrogen sensor is fabricated and investigated. In comparison with the conventional HEMT-based sensors, the MOS MHEMT-based sensor exhibits significantly high sensitivity to the hydrogen. The found hydrogen sensing response is as high as 300%. Using the thermodynamic analysis to estimate the enthalpy value of hydrogen adsorption, the value for the proposed sensor is much lower than that for the other reported HEMT-based sensors. The MHEMT-based sensors are demonstrated to have a relatively fast response as comparing to other HEMT-based ones. The response time of the device is approximately 10 s under exposure to a 1% H2/air gas. Consequently, the performance of the studied sensors shows the promise characteristics for practical applications. © 2010 Professor T. Nejat Veziroglu.

Author-supplied keywords

  • Hydrogen
  • MHEMT
  • Oxide
  • Pd

Get free article suggestions today

Mendeley saves you time finding and organizing research

Sign up here
Already have an account ?Sign in

Find this document

Authors

Cite this document

Choose a citation style from the tabs below

Save time finding and organizing research with Mendeley

Sign up for free