Hydrogen in UHV deposited FeTi thin films

Abstract

FeTi thin films of thickness 1550 A0 were prepared in UHV at 10-8 Torr pressure onto glass substrate. Thickness of the FeTi thin films and the content of hydrogen in films was measured by quartz crystal thickness monitor. In situ measurement shows that the resistance decreases with increase in thickness of the film. During hydrogen absorption in FeTi thin films, hydrogen pressure was varied between 10-8 Torr to 1 atm. The resistance of film was found to increase due to hydrogen exposure and the value of H/M was found to vary between 0.03 and 1.05 and that of H at% 3-50, in the hydrogen pressure range between 10-8 Torr to 1 atm. A relation was established between content of hydrogen in films and its resistance. © 2001 International Association for Hydrogen Energy. Published by Elsevier Science Ltd. All rights reserved.