We discuss the nature and density of defects in pure amorphous silicon, under the light of recent hydrogenation experiments. It is argued that a reliable measure of defect densities can be obtained by counting the number of hydrogen atoms that can be incorporated in a pure starting material by subsequent plasma treatment. This leads to interpretation of hopping conductivities in terms of a Fermi level density of states Nf in excess of 1020 cm-3 eV-1 and wave function spatial extent of the order of 2.5 Å. This figure is shown to be reasonable for a dangling bond wavefunction. © 1979.
CITATION STYLE
Brodsky, M. H., & Kaplan, D. (1979). Hydrogenation and the density of defect states in amorphous silicon. Journal of Non-Crystalline Solids, 32(1–3), 431–435. https://doi.org/10.1016/0022-3093(79)90087-5
Mendeley helps you to discover research relevant for your work.