We discuss the nature and density of defects in pure amorphous silicon, under the light of recent hydrogenation experiments. It is argued that a reliable measure of defect densities can be obtained by counting the number of hydrogen atoms that can be incorporated in a pure starting material by subsequent plasma treatment. This leads to interpretation of hopping conductivities in terms of a Fermi level density of states Nfin excess of 1020cm-3eV-1and wave function spatial extent of the order of 2.5 Å. This figure is shown to be reasonable for a dangling bond wavefunction. © 1979.
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