In this paper the impact of a floating silicon film in a fully depleted SOI-MOSFET is analyzed. A comprehensive explanation for the anomalous behavior of small-signal parameters of such SOI transistors is given and emphasized by the implementation into a physically based compact model, which is capable for circuit simulation of dual-gate transistors. A comparison of modeled small-signal parameters with results of numerical device simulation confirms the presented, truly physical approach for the modeling of floating-body effects in fully depleted SOI-MOSFETs. © 2005 Elsevier Ltd. All rights reserved.
Wiatr, M., & Seegebrecht, P. (2005). Impact of floating silicon film on small-signal parameters of fully depleted SOI-MOSFETs biased into accumulation. In Solid-State Electronics (Vol. 49, pp. 779–789). https://doi.org/10.1016/j.sse.2005.01.008