Impact of floating silicon film on small-signal parameters of fully depleted SOI-MOSFETs biased into accumulation

  • Wiatr M
  • Seegebrecht P
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Abstract

In this paper the impact of a floating silicon film in a fully depleted SOI-MOSFET is analyzed. A comprehensive explanation for the anomalous behavior of small-signal parameters of such SOI transistors is given and emphasized by the implementation into a physically based compact model, which is capable for circuit simulation of dual-gate transistors. A comparison of modeled small-signal parameters with results of numerical device simulation confirms the presented, truly physical approach for the modeling of floating-body effects in fully depleted SOI-MOSFETs. © 2005 Elsevier Ltd. All rights reserved.

Author-supplied keywords

  • Accumulation
  • Floating body
  • Full depletion
  • SOI-MOSFET
  • Small-signal parameters

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Authors

  • MacIej Wiatr

  • Peter Seegebrecht

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