Implantation effects on resonant Raman scattering in CdTe and Cd0.23Hg0.77Te

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Abstract

We have studied In+implanted CdTe and Cd0.23Hg0.77Te by resonant Raman scattering. The laser excitation was in resonance with the EO+ ΔOband gap in CdTe or the E1gap in Cd0.23Hg0.77Te. Under these conditions dipole forbidden but defect ind scattering by one longitudinal optical (LO) phonon as well as Fröhlich-induced two-LO phonon scattering is observed. In both cases scattering is found to be strongly affected by ion implantation. In+was implanted at an ion energy of 350 keV with doses ranging from 1011to 5×1014ions/cm2. The intensity ratio of the one-LO phonon lines is found to be a quantitative measure of the implantation damage in CdTe and Cd0.23Hg0.77Te even for doses as low as 1011ions/cm2. It is shown that the observed effects of implantation damage on resonant Raman scattering by LO phonons are due to a broadening and an energy shift of the corresponding resonances in the Raman scattering efficiency. © 1989.

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Ramsteiner, M., Lusson, A., Wagner, J., Koidl, P., & Bruder, M. (1990). Implantation effects on resonant Raman scattering in CdTe and Cd0.23Hg0.77Te. Journal of Crystal Growth, 101(1–4), 420–424. https://doi.org/10.1016/0022-0248(90)91006-C

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