Implantation effects on resonant Raman scattering in CdTe and Cd0.23Hg0.77Te

  • Ramsteiner M
  • Lusson A
  • Wagner J
 et al. 
  • 1


    Mendeley users who have this article in their library.
  • 4


    Citations of this article.


We have studied In+implanted CdTe and Cd0.23Hg0.77Te by resonant Raman scattering. The laser excitation was in resonance with the EO+ ΔOband gap in CdTe or the E1gap in Cd0.23Hg0.77Te. Under these conditions dipole forbidden but defect ind scattering by one longitudinal optical (LO) phonon as well as Fröhlich-induced two-LO phonon scattering is observed. In both cases scattering is found to be strongly affected by ion implantation. In+was implanted at an ion energy of 350 keV with doses ranging from 1011to 5×1014ions/cm2. The intensity ratio of the one-LO phonon lines is found to be a quantitative measure of the implantation damage in CdTe and Cd0.23Hg0.77Te even for doses as low as 1011ions/cm2. It is shown that the observed effects of implantation damage on resonant Raman scattering by LO phonons are due to a broadening and an energy shift of the corresponding resonances in the Raman scattering efficiency. © 1989.

Get free article suggestions today

Mendeley saves you time finding and organizing research

Sign up here
Already have an account ?Sign in

Find this document


Cite this document

Choose a citation style from the tabs below

Save time finding and organizing research with Mendeley

Sign up for free