Improved limits on β+EC and ECEC processes in112Sn

  • Barabash A
  • Hubert P
  • Nachab A
 et al. 
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Abstract

Limits on β+EC and ECEC processes in112Sn have been obtained using a 380 cm3HPGe detector and an external source consisting of 100 g enriched tin (94.32% of112Sn). A limit with 90% C.L. on the112Sn half-life of 1.3×1021y for the ECEC(0ν) transition to the 03+ excited state in112Cd (1871 keV) has been established. This transition has been discussed in the context of a possible enhancement of the decay rate. The limits on other β+EC and ECEC processes in112Sn have also been obtained on the level of (0.1-1.6)×1021y at the 90% C.L. © 2012 Elsevier B.V.

Author-supplied keywords

  • 112Sn
  • ECEC
  • β+EC

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Authors

  • A. S. Barabash

  • Ph Hubert

  • A. Nachab

  • S. I. Konovalov

  • V. Umatov

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