Improved SiGe power HBT characteristics by emitter layout

  • Huang S
  • Chang C
  • Pan C
 et al. 
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Abstract

A new emitter finger layout in SiGe HBT to reduce thermal-coupling is presented in this study. By redistributing the emitter fingers of various SiGe HBTs, the thermal resistance reduces significantly from 133 to 88 K/W under room temperature. Thus, in dc performance, output conductance increases from -2.0 to -1.6 mA/V. In ac performance, the fMAXshows an improvement over 10%. In power performance, the linear power gain, P1 dBand PAEat P1 dBincrease by 0.5 dB, 1.5 dB and 6.2% at 1.8 GHz, respectively. © 2007 Elsevier Ltd. All rights reserved.

Author-supplied keywords

  • Heterojunction bipolar transistor
  • Self-heating
  • Silicon-germanium
  • Temperature

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Authors

  • Shou Chien Huang

  • Chia Tsung Chang

  • Chun Ting Pan

  • Yue Ming Hsin

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