A new emitter finger layout in SiGe HBT to reduce thermal-coupling is presented in this study. By redistributing the emitter fingers of various SiGe HBTs, the thermal resistance reduces significantly from 133 to 88 K/W under room temperature. Thus, in dc performance, output conductance increases from -2.0 to -1.6 mA/V. In ac performance, the fMAXshows an improvement over 10%. In power performance, the linear power gain, P1 dBand PAEat P1 dBincrease by 0.5 dB, 1.5 dB and 6.2% at 1.8 GHz, respectively. © 2007 Elsevier Ltd. All rights reserved.
Huang, S. C., Chang, C. T., Pan, C. T., & Hsin, Y. M. (2008). Improved SiGe power HBT characteristics by emitter layout. Solid-State Electronics, 52(6), 946–951. https://doi.org/10.1016/j.sse.2007.12.009