Incorporation of dopant atoms and defects in semiconductors: A microscopic view

2Citations
Citations of this article
5Readers
Mendeley users who have this article in their library.
Get full text

Abstract

We demonstrate that scanning tunneling microscopy is an ideal tool for the investigation of individual bulk defects and dopant atoms in semiconductors. This technique allows not only an atomically resolved imaging of individual defects and dopant atoms, but rather a detailed determination of their nanoscale electronic as well as structural properties and their concentrations. The capacities of scanning tunneling microscopy for defect investigations will be presented with help of selected examples. © 2003 Elsevier B.V. All rights reserved.

Cite

CITATION STYLE

APA

Ebert, P. (2003). Incorporation of dopant atoms and defects in semiconductors: A microscopic view. In Physica B: Condensed Matter (Vol. 340–342, pp. 1159–1165). https://doi.org/10.1016/j.physb.2003.10.005

Register to see more suggestions

Mendeley helps you to discover research relevant for your work.

Already have an account?

Save time finding and organizing research with Mendeley

Sign up for free