The carrier energy quantization in the p+-type drain surface region located under the gate electrode of an MOS transistor is investigated. The influence of this phenomena on the gate-drain voltage indispensable for tunnelling of an electron from the valence band to the conduction band is theoretically considered and evaluated. The calculation of the gate induced drain leakage current under nonuniform electric field with inclusion of the carrier energy quantization is carried out as well. © 1995.
Majkusiak, B., & Janik, T. (1995). Influence of carrier energy quantization on the gate-induced drain breakdown. Solid State Electronics, 38(11), 1933–1936. https://doi.org/10.1016/0038-1101(95)00021-K