The influence of electron-electron scattering on the hot electron distribution in Si-MOSFETs with channel length down to 25 nm is investigated using the local iterative Monte Carlo (LIMO) technique. The LIMO approach simplifies the calculation of electron-electron scattering since the electron distribution is accessible throughout the simulation. An excellent agreement with available experimental findings could be achieved. Our results indicate that the heating of electrons becomes less pronounced for channel length below 50 nm due to a more ballistic electron transport through the channel. © 2002 Elsevier Science B.V. All rights reserved.
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