On the influence of substrate doping on the input conductance and the induced gate noise in MOSFETs

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Abstract

The input conductance ggsand its associate noise spectrum Sg(f{hook}) in MOSFETs is evaluated numerically and expressed in terms of a doping parameter φ. The results augment earlier calculations by Klaassen. For ggsa function F2(φ) is introduced that depends only slowly on φ and on the bias voltages Vg′ and Vb′. Expressing the noise in terms of the parameter β = Sg(f{hook}) (4kTggs), it is found that β is practically independent of φ, Vg′ and Vb′. © 1985.

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Wu, E. N., & van der Ziel, A. (1984). On the influence of substrate doping on the input conductance and the induced gate noise in MOSFETs. Solid State Electronics, 27(11), 945–946. https://doi.org/10.1016/0038-1101(84)90066-2

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