Infrared analysis of the precipitated oxide phase in silicon and germanium

  • De Gryse O
  • Vanmeerbeek P
  • Vanhellemont J
 et al. 
  • 4

    Readers

    Mendeley users who have this article in their library.
  • 16

    Citations

    Citations of this article.

Abstract

Oxygen-doped germanium samples have been subjected to a prolonged precipitation treatment in the 560-620 °C temperature range. Broad infrared absorption bands with maxima at 865 and 884 cm-1which develop proportionally with the loss of interstitial oxygen are observed and are attributed to germanium oxide precipitates. Secondary peaks appear at 675 and 958 cm-1. The broad absorption bands are analyzed using a procedure which was previously applied to SiOxprecipitates in silicon. Similarly as in silicon, the absorption in germanium may be fitted assuming the presence of polyhedral and platelet GeOxprecipitates, with relative occurrence depending on the details of the thermal treatment. © 2005 Elsevier B.V. All rights reserved.

Author-supplied keywords

  • Germanium
  • Infrared
  • Oxide precipitate

Get free article suggestions today

Mendeley saves you time finding and organizing research

Sign up here
Already have an account ?Sign in

Find this document

Authors

Cite this document

Choose a citation style from the tabs below

Save time finding and organizing research with Mendeley

Sign up for free