In-situ Fourier transform infrared spectroscopy of electrochemical processes at the silicon-acetonitrile interface

  • Boonekamp E
  • Kelly J
  • van der Ven J
 et al. 
  • 2


    Mendeley users who have this article in their library.
  • 8


    Citations of this article.


A new approach is used for the study of the semiconductor-solution interface with Fourier transform IR spectroscopy (FTIRS) in the multiple total internal reflection mode. In this method, a thin semiconductor wafer is mounted on a germanium internal reflection crystal by wafer-bonding. Measurements are possible in a wide frequency range (800-4000 cm-1). The potential of the method is demonstrated by measurements on the anodic oxidation in acetonitrile containing a low concentration water of n-type silicon (111) surfaces pretreated in hydrofluoric acid solution. The experiments show that detection of surface bound species (SiH, SiOSi) is possible with submonolayer sensitivity. © 1993.

Get free article suggestions today

Mendeley saves you time finding and organizing research

Sign up here
Already have an account ?Sign in

Find this document


  • E. P. Boonekamp

  • J. J. Kelly

  • J. van der Ven

  • A. H.M. Sondag

Cite this document

Choose a citation style from the tabs below

Save time finding and organizing research with Mendeley

Sign up for free