A new approach is used for the study of the semiconductor-solution interface with Fourier transform IR spectroscopy (FTIRS) in the multiple total internal reflection mode. In this method, a thin semiconductor wafer is mounted on a germanium internal reflection crystal by wafer-bonding. Measurements are possible in a wide frequency range (800-4000 cm-1). The potential of the method is demonstrated by measurements on the anodic oxidation in acetonitrile containing a low concentration water of n-type silicon (111) surfaces pretreated in hydrofluoric acid solution. The experiments show that detection of surface bound species (SiH, SiOSi) is possible with submonolayer sensitivity. © 1993.
Boonekamp, E. P., Kelly, J. J., van der Ven, J., & Sondag, A. H. M. (1993). In-situ Fourier transform infrared spectroscopy of electrochemical processes at the silicon-acetonitrile interface. Journal of Electroanalytical Chemistry, 344(1–2), 187–198. https://doi.org/10.1016/0022-0728(93)80055-M