A recently presented model for the development of a dislocation density in HVEM-irradiated thin foils has been applied to nickel. From matching the results to previously reported experimental measurements of loop radius growth as a function of position in the foil, the dislocation bias and vacancy migration energy in nickel have been determined. A comparison has been carried out of the effect on the results of using two distinct sink strengths to model the flow of defects to the dislocation loops. Equally good fits to the experimental data have been obtained with either sink strength and consequently it has not proved possible to select a preferable representation for the loops. © 1983.
Miller, K. M. (1983). Interstitial loop growth in HVEM-irradiated nickel foils. Journal of Nuclear Materials, 115(2–3), 216–222. https://doi.org/10.1016/0022-3115(83)90313-6