I(V) computational coduction model for a SiC-6H Schottky diode

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Abstract

A computational model has been developed in order to explain the anomalies observed in the direct SiC-6H I(V) characteristic diode. These irregularities consist in a thermionic, a generation-recombination, a tunnelling and a leakage electric current contributions. Two kinds of diode's dimensions have been used. For the small one, a good fitting, at all temperatures has been obtained, but for the big one, the fitting was relatively bad, perhaps due to a so important parasite resistance versus potential variation. Even, a high parasite resistance has been encountered near room temperature. From the Richardson plot, it has been extracted a value of the Richardson constant A* very smaller than the theoretical value. A value of the barrier height has also been evaluated. © 2008 Elsevier B.V. All rights reserved.

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Benmaza, H., Akkal, B., Anani, M., Abid, H., Bensaad, Z., & Bluet, J. M. (2008). I(V) computational coduction model for a SiC-6H Schottky diode. Materials Chemistry and Physics, 112(1), 63–67. https://doi.org/10.1016/j.matchemphys.2008.05.037

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