Laser induced doping profiles in molecular beam epitaxy grown ZnSe doped with iodine

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Abstract

An optical projection system has been developed which allows patterning of both layer thickness and donor concentration in epitaxial films of ZnSe during growth by molecular beam epitaxy. Doping features with a period as small as 40 μ m have been produced and it appears possible to reduce this by at least one order of magnitude. Such in-situ techniques may be valuable for the fabrication of more sophisticated devices than are currently being produced from the wide-gap II-VI compounds. © 1994.

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Mullins, J. T., Horsburgh, G., Simpson, J., Thompson, P., Taghizadeh, M. R., Hauksson, I., … Cullis, A. G. (1994). Laser induced doping profiles in molecular beam epitaxy grown ZnSe doped with iodine. Journal of Crystal Growth, 138(1–4), 357–361. https://doi.org/10.1016/0022-0248(94)90833-8

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