An optical projection system has been developed which allows patterning of both layer thickness and donor concentration in epitaxial films of ZnSe during growth by molecular beam epitaxy. Doping features with a period as small as 40 μ m have been produced and it appears possible to reduce this by at least one order of magnitude. Such in-situ techniques may be valuable for the fabrication of more sophisticated devices than are currently being produced from the wide-gap II-VI compounds. © 1994.
Mullins, J. T., Horsburgh, G., Simpson, J., Thompson, P., Taghizadeh, M. R., Hauksson, I., … Cullis, A. G. (1994). Laser induced doping profiles in molecular beam epitaxy grown ZnSe doped with iodine. Journal of Crystal Growth, 138(1–4), 357–361. https://doi.org/10.1016/0022-0248(94)90833-8