Laser induced doping profiles in molecular beam epitaxy grown ZnSe doped with iodine

  • Mullins J
  • Horsburgh G
  • Simpson J
 et al. 
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An optical projection system has been developed which allows patterning of both layer thickness and donor concentration in epitaxial films of ZnSe during growth by molecular beam epitaxy. Doping features with a period as small as 40 μ m have been produced and it appears possible to reduce this by at least one order of magnitude. Such in-situ techniques may be valuable for the fabrication of more sophisticated devices than are currently being produced from the wide-gap II-VI compounds. © 1994.

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  • J. T. Mullins

  • G. Horsburgh

  • J. Simpson

  • P. Thompson

  • M. R. Taghizadeh

  • I. Hauksson

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