Lattice matching effect on the luminescent properties of n-ZnSSe on GaAs grown by MOCVD

7Citations
Citations of this article
1Readers
Mendeley users who have this article in their library.
Get full text

Abstract

Lattice matching effects on Br-doped ZnSSe/GaAs system were studied. A homogeneous image was observed in the lattice matched system ZnS0.09Se0.91/GaAs by SEM cathodeluminescence (CL), whereas there were many dark spots on CL images for the lattice mismatched ZnSe/GaAs system. The dislocation density on the (100) surface was estimated as 108cm-2from TEM cross sectional images and 107cm-2by etch-pit measurement in the lattice mismatch system. The dislocation density decreased to below 106cm-2from TEM estimation and 104cm-2from EPD measurement by lattice matching. The photoluminescence (PL) intensity at room temperature for lattice matched ZnSSe was about 10 times larger than that for lattice mismatched ZnSe with the same doping concentration (n=1016cm-3). These studies proved that precise lattice matching is needed to obtain crystals which have a high luminescence efficiency. © 1990.

Cite

CITATION STYLE

APA

Uemoto, T., Kamata, A., Mitsuhashi, H., Hirahara, K., & Beppu, T. (1990). Lattice matching effect on the luminescent properties of n-ZnSSe on GaAs grown by MOCVD. Journal of Crystal Growth, 99(1–4), 422–426. https://doi.org/10.1016/0022-0248(90)90556-Z

Register to see more suggestions

Mendeley helps you to discover research relevant for your work.

Already have an account?

Save time finding and organizing research with Mendeley

Sign up for free