Location controlled high performance single-grain Ge TFTs on glass substrate

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Abstract

We report high performance single-grain Ge TFTs by μ-Czochralski process. Electron mobilities are 3337 cm 2/Vs with on/off ratio of 10 8 @V DS = 0.1 V. Hole mobilities are 1719 cm 2/Vs with on/off ratio of 10 8 @V DS = 0.05 V. The high mobility is due to improved interface property and tensile stress. © 2011 Elsevier Ltd. All rights reserved.

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Chen, T., Ishihara, R., & Beenakker, K. (2012). Location controlled high performance single-grain Ge TFTs on glass substrate. Solid-State Electronics, 69, 94–98. https://doi.org/10.1016/j.sse.2011.11.027

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