We report high performance single-grain Ge TFTs by μ-Czochralski process. Electron mobilities are 3337 cm2/Vs with on/off ratio of 108@VDS= 0.1 V. Hole mobilities are 1719 cm2/Vs with on/off ratio of 108@VDS= 0.05 V. The high mobility is due to improved interface property and tensile stress. © 2011 Elsevier Ltd. All rights reserved.
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