Location controlled high performance single-grain Ge TFTs on glass substrate

  • Chen T
  • Ishihara R
  • Beenakker K
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Abstract

We report high performance single-grain Ge TFTs by μ-Czochralski process. Electron mobilities are 3337 cm2/Vs with on/off ratio of 108@VDS= 0.1 V. Hole mobilities are 1719 cm2/Vs with on/off ratio of 108@VDS= 0.05 V. The high mobility is due to improved interface property and tensile stress. © 2011 Elsevier Ltd. All rights reserved.

Author-supplied keywords

  • Excimer laser crystallization
  • Ge transistors
  • Laser crystallization
  • Thin film transistors

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Authors

  • Tao Chen

  • Ryoichi Ishihara

  • Kees Beenakker

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