We report high performance single-grain Ge TFTs by μ-Czochralski process. Electron mobilities are 3337 cm 2/Vs with on/off ratio of 10 8 @V DS = 0.1 V. Hole mobilities are 1719 cm 2/Vs with on/off ratio of 10 8 @V DS = 0.05 V. The high mobility is due to improved interface property and tensile stress. © 2011 Elsevier Ltd. All rights reserved.
Chen, T., Ishihara, R., & Beenakker, K. (2012). Location controlled high performance single-grain Ge TFTs on glass substrate. Solid-State Electronics, 69, 94–98. https://doi.org/10.1016/j.sse.2011.11.027