Low-resistance and transparent Ni-Co solid solution/Au ohmic contacts to p-type GaN for green GaN-based light-emitting diodes

  • Kim K
  • Hong H
  • Song J
 et al. 
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Abstract

We report on the formation of low-resistance and transparent p-type ohmic contact for green GaN-based light-emitting diodes (LEDs) using Ni-Co solid solution(5 nm)/Au(5 nm) scheme. The as-deposited Ni-Co solid solution(5 nm)/Au(5 nm) contact shows nonlinear current-voltage (I - V) characteristics. However, annealing the sample at 550 {ring operator}C in air results in the formation of ohmic contacts with specific contact resistance of 6.5×10-4 Ω cm2. The annealed sample shows light transmittance of 71.7% at a wavelength of 530 nm, which is better than that (64.9%) of oxidized Ni/Au contacts. Based on Auger electron spectroscopy and x-ray photoemission spectroscopy results, the annealing-induced improvement of the contacts is described and discussed. © 2008 Elsevier Ltd. All rights reserved.

Author-supplied keywords

  • Contact resistivity
  • Green LED
  • Light transmittance
  • Ni-Co solid solution/Au
  • Ohmic contact

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Authors

  • Kang Won Kim

  • Hyun Gi Hong

  • June O. Song

  • Joon Ho Oh

  • Tae Yeon Seong

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