LPE growth and characterization of n-type InAs

Abstract

The LPE growth of n-type InAs on InAs substrates has been studied. Sn and Te were used as n-type dopants and distribution coefficients of 1.1 × 10-3 and 8.4 respectively were measured. Hall measurements were performed over the temperature range 10-300 K for selected samples and at 77 K over a wide range of doping levels. Theoretical calculations gave good agreement with experiment when both polar-optical phonon scattering and ionized impurity scattering with degeneracy and non-parabolicity were taken into account. © 1986.