LPE growth and characterization of n-type InAs

  • Harrison R
  • Houston P
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Abstract

The LPE growth of n-type InAs on InAs substrates has been studied. Sn and Te were used as n-type dopants and distribution coefficients of 1.1 × 10-3and 8.4 respectively were measured. Hall measurements were performed over the temperature range 10-300 K for selected samples and at 77 K over a wide range of doping levels. Theoretical calculations gave good agreement with experiment when both polar-optical phonon scattering and ionized impurity scattering with degeneracy and non-parabolicity were taken into account. © 1986.

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Authors

  • R. J. Harrison

  • P. A. Houston

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