LPE growth and characterization of n-type InAs

  • Harrison R
  • Houston P
  • 2


    Mendeley users who have this article in their library.
  • 13


    Citations of this article.


The LPE growth of n-type InAs on InAs substrates has been studied. Sn and Te were used as n-type dopants and distribution coefficients of 1.1 × 10-3and 8.4 respectively were measured. Hall measurements were performed over the temperature range 10-300 K for selected samples and at 77 K over a wide range of doping levels. Theoretical calculations gave good agreement with experiment when both polar-optical phonon scattering and ionized impurity scattering with degeneracy and non-parabolicity were taken into account. © 1986.

Get free article suggestions today

Mendeley saves you time finding and organizing research

Sign up here
Already have an account ?Sign in

Find this document


  • R. J. Harrison

  • P. A. Houston

Cite this document

Choose a citation style from the tabs below

Save time finding and organizing research with Mendeley

Sign up for free