The LPE growth of n-type InAs on InAs substrates has been studied. Sn and Te were used as n-type dopants and distribution coefficients of 1.1 × 10-3and 8.4 respectively were measured. Hall measurements were performed over the temperature range 10-300 K for selected samples and at 77 K over a wide range of doping levels. Theoretical calculations gave good agreement with experiment when both polar-optical phonon scattering and ionized impurity scattering with degeneracy and non-parabolicity were taken into account. © 1986.
Harrison, R. J., & Houston, P. A. (1986). LPE growth and characterization of n-type InAs. Journal of Crystal Growth, 78(2), 257–262. https://doi.org/10.1016/0022-0248(86)90061-8