Magnetoresistance of inversion and accumulation layers in MOS structures on pSi (100)

9Citations
Citations of this article
1Readers
Mendeley users who have this article in their library.
Get full text

Abstract

The magnetoresistance of two-dimensional electron and hole gases in MOS structures onpSi (100) was studied in inversion and accumulation regimes, respectively, measurements being made without contacts using a new experimental technique. In the magnetic field (h < 7 T) parallel to the sample surface the positive magnetoresistance was established to depend on a combination H/Tα (α ≈ 0.5, 1.7 ≤ T ≤ 4.2 K), that is unexplainable in terms of modern theories of electron localization and electron-electron interaction. In the perpendicular field, the magnetoresistance of p-accumulation layer is positive and comparable in magnitude with that in the parallel field. © 1984.

Cite

CITATION STYLE

APA

Dolgopolov, V. T., Dorozhkin, S. I., & Shashkin, A. A. (1984). Magnetoresistance of inversion and accumulation layers in MOS structures on pSi (100). Solid State Communications, 50(3), 273–277. https://doi.org/10.1016/0038-1098(84)90811-1

Register to see more suggestions

Mendeley helps you to discover research relevant for your work.

Already have an account?

Save time finding and organizing research with Mendeley

Sign up for free