The magnetoresistance of two-dimensional electron and hole gases in MOS structures onpSi (100) was studied in inversion and accumulation regimes, respectively, measurements being made without contacts using a new experimental technique. In the magnetic field (h < 7 T) parallel to the sample surface the positive magnetoresistance was established to depend on a combination H/Tα (α ≈ 0.5, 1.7 ≤ T ≤ 4.2 K), that is unexplainable in terms of modern theories of electron localization and electron-electron interaction. In the perpendicular field, the magnetoresistance of p-accumulation layer is positive and comparable in magnitude with that in the parallel field. © 1984.
Dolgopolov, V. T., Dorozhkin, S. I., & Shashkin, A. A. (1984). Magnetoresistance of inversion and accumulation layers in MOS structures on pSi (100). Solid State Communications, 50(3), 273–277. https://doi.org/10.1016/0038-1098(84)90811-1