Measurement and analysis of the characteristics parameters for the porous silicon/silicon using photovoltage spectra

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Abstract

The photovoltage spectra of the porous silicon/silicon (PS/Si) formed on the p-type silicon substrates of 〈111〉 and 〈100〉 orientation by different electrochemical anode etching conditions are measured. The photovoltage expressions with relation to the characteristic parameters are derived. The characteristic parameters: The bandgap, the carrier lifetime, and the intrinsic carrier concentration of the porous silicon layer, and the heterojunction barrier width of the PS/Si, are calculated from the measured photovoltage by using the theoretical expressions. Some calculated results are compared with the experiments. It is shown that the results are basically reasonable.

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Suntao, W., Yanhua, W., & Qihua, S. (2000). Measurement and analysis of the characteristics parameters for the porous silicon/silicon using photovoltage spectra. Applied Surface Science, 158(3), 268–274. https://doi.org/10.1016/S0169-4332(00)00008-8

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