Cubic GaN (c-GaN) epilayers have been successfully grown on (100)GaAs substrates by metalorganic molecular beam epitaxy (MOMBE) using triethylgallium and monomethylhydrazine (MMHy). It was demonstrated for the first time that MMHy can be used for GaN growth as a new nitrogen (N) source. The crystallinity and surface morphology of a c-GaN epilayer grown without nitridation was found to be much better than that of GaN grown with nitridation. The highest growth rate of a c-GaN epilayer by MOMBE using MMHy with a flux of 1.4 × 10-4Torr was about 800 Å/h at 620° C. The quality of the c-GaN epilayer was best at a growth temperature of 660° C, which was comparable to the optimum growth temperature of c-GaN by conventional gas source MBE (molecular beam epitaxy) on GaAs substrates. © 1995.
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