Micromechanical based constitutive relations for modeling the bulk growth of single crystal InP

  • Kalan R
  • Maniatty A
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Abstract

A micromechanical based constitutive model is developed for InP, which takes into account the movement and multiplication of dislocations. The model is based on the single slip model of Alexander and Haasen, and is expanded to include multiple slip and latent hardening. The model is incorporated into a finite element code and the results are compared to experimental data for compression tests in a single slip orientation. © 2001 Elsevier Science B.V. All rights reserved.

Author-supplied keywords

  • A1. computer simulation
  • A1. line defects
  • A1. stresses
  • B2. semiconducting indium phosphide

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Authors

  • Robert J. Kalan

  • Antoinette M. Maniatty

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