A model calculation of the characteristic Raman modes in the tetrahedral network structures of GeSe2

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Abstract

The characteristic peaks, A at 211 and A* at 216 cm-1, in the Raman spectra of layered crystalline GeSe2 have been studied by a model calculation using a valence force field and bond polarizability (VFF-BP). The A phonon is extended along the GeSe4 tetrahedral chain, while the A* phonon is quasi-localized at the edge-sharing GeSe4 tetrahedra. An extended VFF-BP model including interlayer interactions between Se atoms is proposed to understand the peculiar weakness of the A* Raman intensity.

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Inoue, K., Matsuda, O., & Murase, K. (1996). A model calculation of the characteristic Raman modes in the tetrahedral network structures of GeSe2. Physica B: Condensed Matter, 219220(1–4), 520–522. https://doi.org/10.1016/0921-4526(95)00798-9

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