A model calculation of the characteristic Raman modes in the tetrahedral network structures of GeSe2

  • Inoue K
  • Matsuda O
  • Murase K
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The characteristic peaks, A at 211 and A* at 216 cm-1, in the Raman spectra of layered crystalline GeSe2have been studied by a model calculation using a valence force field and bond polarizability (VFF-BP). The A phonon is extended along the GeSe4tetrahedral chain, while the A* phonon is quasi-localized at the edge-sharing GeSe4tetrahedra. An extended VFF-BP model including interlayer interactions between Se atoms is proposed to understand the peculiar weakness of the A* Raman intensity.

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  • Koichi Inoue

  • Osamu Matsuda

  • Kazuo Murase

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