Abstract
Molecular beam epitaxy of pure CuCl films on mica was studied for various substrate temperatures (16-250 °C). Both the transmission Laue method and diffractometer methods were used to characterize the films. All films showed the [111] zinc blende texture but only those films prepared at about 150 °C showed excellent, though twinned, epitaxy. © 1982.
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CITATION STYLE
APA
Wong, H. K., Gu, S. J., Wong, G. K., & Ketterson, J. B. (1982). Molecular beam epitaxy of CuCl films on mica. Thin Solid Films, 94(1), 75–78. https://doi.org/10.1016/0040-6090(82)90032-3
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