Monte Carlo simulation of the modulated effect induced by the dislocation to the quantum dot growth

  • Zhao C
  • Chen Y
  • Zhao M
 et al. 
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Abstract

Performing an event-based continuous kinetic Monte Carlo simulation, we investigate the modulated effect induced by the dislocation on the substrate to the growth of semiconductor quantum dots (QDs). The relative positions between the QDs and the dislocations are studied. The stress effects to the growth of the QDs are considered in simulation. The simulation results are compared with the experiment and the agreement between them indicates that this simulation is useful to study the growth mode and the atomic kinetics during the growth of the semiconductor QDs. © 2006 Elsevier Ltd. All rights reserved.

Author-supplied keywords

  • Kinetic effects
  • Molecular beam epitaxy
  • Monte Carlo simulation
  • Quantum dot

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