Monte Carlo simulation of the PVD transport process for alloys

  • Lugscheider E
  • Bobzin K
  • Papenfuß-Janzen N
 et al. 
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Using three-dimensional Monte Carlo methods the transport of sputtered material in a PVD process was simulated for single element and alloy targets. The aim of the simulation was to calculate the thickness distribution of the deposited films on complex substrates as well as the kinetic properties of the deposited particles. The results of the simulations were compared with experimentally processed films. © 2005 Elsevier B.V. All rights reserved.

Author-supplied keywords

  • Computer simulation
  • Multi-component sputtering
  • Physical vapour deposition

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