Multiband k·p calculation of exciton diamagnetic shift in InP/InGaP self-assembled quantum dots

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Abstract

Exciton states in self-assembled InP/In0.49Ga0.51P quantum dots subject to magnetic fields up to 50 T are calculated. Strain and band mixing are explicitly taken into account in the single-particle models of the electronic structure, while an exact diagonalization approach is adopted to compute the exciton states. Reasonably good agreement with magneto-photoluminescence measurements on InP self-assembled quantum dots is found. As a result of the polarization and angular momentum sensitive selection rules, the exciton ground state is dark. For in-plane polarized light, the magnetic field barely affects the exciton spatial localization, and consequently the exciton oscillator strength for recombination increases only slightly with increasing field. For z polarized light, a sharp increase of the oscillator strength beyond 30 T is found which is attributed to the enhanced s character of the relevant portion of the exciton wave function. © 2004 Elsevier B.V. All rights reserved.

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Tadić, M., Mlinar, V., & Peeters, F. M. (2005). Multiband k·p calculation of exciton diamagnetic shift in InP/InGaP self-assembled quantum dots. In Physica E: Low-Dimensional Systems and Nanostructures (Vol. 26, pp. 212–216). https://doi.org/10.1016/j.physe.2004.08.101

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