A multiple-beam ion source has been developed based on the same principle as the Kaufman type source, but equipped with a post-acceleration electrode, the voltage ranging from 1 to 10 kV. Several applications of this equipment have been considered, mainly low energy ion implantation which is difficult to achieve with conventional ion implantation equipment. In this paper, we will consider the application of hydrogen ion implantation in polysilicon in order to passivate the defects located within the grains as well as at grain boundaries. © 1985.
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