Nano-crystalline Zr2ON2 thin films deposited by reactive magnetron sputtering

  • Rizzo A
  • Signore M
  • Mirenghi L
 et al. 
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Abstract

Zirconium oxynitride films were deposited by RF reactive magnetron sputtering in water vapor-nitrogen atmosphere varying the deposition temperature from RT to 600 °C. The influence of the substrate temperature on the films physical properties was investigated. The obtained films quality was evaluated using optical analysis, X-ray diffraction, X-photoelectron spectroscopy, and Secondary Ion mass spectroscopy. It was found that the variation of the substrate temperature from RT to 600 °C caused the transition from cubic phase of Zr2ON2 to ZrN one, as confirmed by TEM observations. In particular, a co-presence of Zr3N4-ZrN was detected when the deposition was performed at 400 °C. Moreover, Forouhi-Bloomer dispersion equations for extinction coefficient (k) and deconvolution of XPS spectra are utilized to further elucidate chemical structure. © 2009 Elsevier B.V. All rights reserved.

Author-supplied keywords

  • Magnetron sputtering
  • Zirconium oxynitride

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