We report on a new technique to characterize the deep defects in low temperature grown GaAs (LT-GaAs), based on a thin LT-GaAs layer embedded in the intrinsic zone of a pin diode. At this structure we have performed steady state and time dependent measurements of the n-channel conductance. Thus we deduce information about the activation energy and the capture time constant of the deep defects. © 2001 Elsevier Science B.V. All rights reserved.
Steen, C., Kiesel, P., Tautz, S., Krämer, S., Soubatch, S., Malzer, S., & Döhler, G. H. (2001). N-channel conductance spectroscopy of deep defects in low temperature grown GaAs. Physica B: Condensed Matter, 308–310, 1177–1180. https://doi.org/10.1016/S0921-4526(01)00934-6