N-channel conductance spectroscopy of deep defects in low temperature grown GaAs

  • Steen C
  • Kiesel P
  • Tautz S
 et al. 
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Abstract

We report on a new technique to characterize the deep defects in low temperature grown GaAs (LT-GaAs), based on a thin LT-GaAs layer embedded in the intrinsic zone of a pin diode. At this structure we have performed steady state and time dependent measurements of the n-channel conductance. Thus we deduce information about the activation energy and the capture time constant of the deep defects. © 2001 Elsevier Science B.V. All rights reserved.

Author-supplied keywords

  • AsGa-antisite defect
  • Electron emission rate
  • LT-GaAs

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Authors

  • C. Steen

  • P. Kiesel

  • S. Tautz

  • S. Krämer

  • S. Soubatch

  • S. Malzer

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