We report on a new technique to characterize the deep defects in low temperature grown GaAs (LT-GaAs), based on a thin LT-GaAs layer embedded in the intrinsic zone of a pin diode. At this structure we have performed steady state and time dependent measurements of the n-channel conductance. Thus we deduce information about the activation energy and the capture time constant of the deep defects. © 2001 Elsevier Science B.V. All rights reserved.
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