Abstract
Results of theoretical and experimental investigations of "negative" luminescence are given. This phenomenon is studied in InSb and CdHgTe semiconductors in the spectral range of the band-to-band optical transitions. The negative luminescence parameters in these semiconductors are studied and the most important features of this phenomenon are discussed. © 1985.
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CITATION STYLE
APA
Malyutenko, V. K., Bolgov, S. S., & Yablonovsky, E. I. (1985). A new type of IR luminescence. Infrared Physics, 25(1–2), 115–119. https://doi.org/10.1016/0020-0891(85)90065-X
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