Noise characterization of a-Si:H pin diodes

  • Jankovec M
  • Stiebig H
  • Smole F
 et al. 
  • 4

    Readers

    Mendeley users who have this article in their library.
  • 2

    Citations

    Citations of this article.

Abstract

Dark current noise power spectral density of a series of a-Si:H pin diodes with different i layer thicknesses (400 and 130 nm) and front contact material (SnO2and Cr) was measured at different forward and reverse bias. Considering static and dynamic properties of the measurement system and diodes themselves, parameters of thermal, shot and 1/f noise of diodes were determined and mutually compared. The main noise sources are shot and 1/f noise. The 1/f noise at forward bias shows no significant deviations among different diodes, while at reverse bias, diodes deposited on SnO2exhibit high 1/f noise with respect to those on Cr, where it remains below detection limit. © 2006 Elsevier B.V. All rights reserved.

Author-supplied keywords

  • Sensors
  • Silicon

Get free article suggestions today

Mendeley saves you time finding and organizing research

Sign up here
Already have an account ?Sign in

Find this document

Authors

Cite this document

Choose a citation style from the tabs below

Save time finding and organizing research with Mendeley

Sign up for free