Nonalloyed transparent ohmic contacts of indium tin oxide (ITO) to p-type Si0.8Ge0.2layer with and without a Si-capping layer were examined. The ITO films and the p-type Si0.8Ge0.2layers were deposited by using sputtering and ultrahigh-vacuum chemical vapor deposition, respectively. It is shown that the ITO/p-type Si0.8Ge0.2contact structure exhibits a specific contact resistance of 2.26 × 10- 5Ω cm2as compared to that of 2.78 × 10- 2Ω cm2for the ITO/Si/p-type Si0.8Ge0.2contact structure. Possible mechanisms are proposed. The ITO film exhibits a transmittance more than 85% within a wavelength range from 800 to 1400 nm. Therefore, the ITO film has a high potential for fabricating near infrared optoelectronic devices using Si1-xGexmaterial. © 2005 Elsevier B.V. All rights reserved.
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