We investigate the morphology and strain distribution of the surface crosshatch undulation on a strain-relaxed SiGe layer grown on a low-temperature Si buffer layer by atomic force microscopy and spatially-resolved UV-Raman spectroscopy. Surface crosshatch undulation resulted from misfit dislocations at the SiGe/Si interface is associated with the strain relaxation in the SiGe layer. By means of thermal annealing, strain relaxes and the inhomogeneous in-plane strain fluctuation can be eliminated. © 2008 Elsevier B.V. All rights reserved.
Huang, W. P., Cheng, H. H., Sun, G., Lou, R. F., Yeh, J. H., & Shen, T. M. (2008). Observation of in-plane strain fluctuation in relaxed SiGe virtual substrate. Thin Solid Films, 517(1), 281–284. https://doi.org/10.1016/j.tsf.2008.08.075