Observation of in-plane strain fluctuation in relaxed SiGe virtual substrate

  • Huang W
  • Cheng H
  • Sun G
 et al. 
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Abstract

We investigate the morphology and strain distribution of the surface crosshatch undulation on a strain-relaxed SiGe layer grown on a low-temperature Si buffer layer by atomic force microscopy and spatially-resolved UV-Raman spectroscopy. Surface crosshatch undulation resulted from misfit dislocations at the SiGe/Si interface is associated with the strain relaxation in the SiGe layer. By means of thermal annealing, strain relaxes and the inhomogeneous in-plane strain fluctuation can be eliminated. © 2008 Elsevier B.V. All rights reserved.

Author-supplied keywords

  • Atomic force microscopy
  • Strain relaxation
  • UV-Raman
  • Virtual substrate

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Authors

  • Wu Ping Huang

  • Henry H. Cheng

  • Gregory Sun

  • Rui Fa Lou

  • J. H. Yeh

  • Tzer Min Shen

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