We investigated the cleaning process of Si(1 0 0) surfaces by annealing in H2gas ambient following chemical treatments by scanning tunneling microscopy. We observed the monohydride Si structure: Si(1 0 0):2 × 1-H on the surfaces annealed at 1000 °C in 2.5 × 104Pa H2gas ambient without conspicuous contaminants. On the sample annealed for 10 min or longer times, well-defined Si(1 0 0) structures with alternating SAand SBsteps were observed, whereas the initial roughness still remained on the surfaces annealed for only 5 min. © 2005 Elsevier B.V. All rights reserved.
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