Observation of Si(1 0 0) surfaces annealed in hydrogen gas ambient by scanning tunneling microscopy

  • Kuribayashi H
  • Gotoh M
  • Hiruta R
 et al. 
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Abstract

We investigated the cleaning process of Si(1 0 0) surfaces by annealing in H2gas ambient following chemical treatments by scanning tunneling microscopy. We observed the monohydride Si structure: Si(1 0 0):2 × 1-H on the surfaces annealed at 1000 °C in 2.5 × 104Pa H2gas ambient without conspicuous contaminants. On the sample annealed for 10 min or longer times, well-defined Si(1 0 0) structures with alternating SAand SBsteps were observed, whereas the initial roughness still remained on the surfaces annealed for only 5 min. © 2005 Elsevier B.V. All rights reserved.

Author-supplied keywords

  • H2anneal
  • H2gas
  • STM
  • Si

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Authors

  • Hitoshi Kuribayashi

  • Masahide Gotoh

  • Reiko Hiruta

  • Ryosuke Shimizu

  • Koichi Sudoh

  • Hiroshi Iwasaki

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