Ohmic contact to p-type GaP

  • Pfeifer J
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Abstract

A study was made of the contact properties of a AuBe eutectic and a AuBeNi alloy on p-type GaP. The specific contact resistance varied from 1 × 10-3to 7.5 × 10-5ω cm2in the acceptor concentration range of 9 × 1016to 2 × 1018cm-3. In the sintering temperature range resulting in good ohmic behaviour and low contact resistance the AuBe contacts do not form drops, whereas the AuBeNi contacts became molten; even after melting they wetted the surface of the GaP well. At the temperature of sintering Be diffuses from the contact into the GaP. The diffusion of Be gives rise to an additional acceptor concentration of 5 × 1018to 1 × 1019cm-3beneath the contact surface. Taking this into consideration the concentration-specific contact resistance relationship appears to support a field emission FE conduction mechanism. © 1976.

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Authors

  • J. Pfeifer

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