OMVPE growth of AlP/GaP superlattices using tertiarybutylphosphine as a phosphorus source

  • Wakahara A
  • Wang X
  • Sasaki A
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Abstract

AlGaP layers and AlP/GaP superlattices were grown by atmospheric pressure OMVPE at low temperature on GaP substrates using tertiarybutylphosphine (TBP) as a phosphorus source for safety and using (NH4)2Sxsolution for surface stabilization. High crystalline quality AlGaP epi-layers with specular surfaces were obtained at relatively low growth temperatures (

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Authors

  • Akihiro Wakahara

  • Xue Lun Wang

  • Akio Sasaki

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