OMVPE growth of AlP/GaP superlattices using tertiarybutylphosphine as a phosphorus source

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Abstract

AlGaP layers and AlP/GaP superlattices were grown by atmospheric pressure OMVPE at low temperature on GaP substrates using tertiarybutylphosphine (TBP) as a phosphorus source for safety and using (NH4)2Sxsolution for surface stabilization. High crystalline quality AlGaP epi-layers with specular surfaces were obtained at relatively low growth temperatures ( <755°C) by using a (NH4)2Sxsurface treatment. The AlP/GaP superlattices were grown at 725°C with a V/III ratio of 20 by using the (NH4)2Sxtreatment. The X-ray diffraction profile showed satellite reflection peaks up to as high as fifth order for the (AlP)17/(GaP)17superlattice. © 1992.

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Wakahara, A., Wang, X. L., & Sasaki, A. (1992). OMVPE growth of AlP/GaP superlattices using tertiarybutylphosphine as a phosphorus source. Journal of Crystal Growth, 124(1–4), 118–122. https://doi.org/10.1016/0022-0248(92)90447-Q

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