Optical parameters in ZnO nanocrystalline textured films grow on p-InP (100) substrates

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Spectroscopic ellipsometry measurements on ZnO nanocrystalline textured films grown on p-InP (100) substrates by using radio-frequency magnetron sputtering at room temperature were carried out to investigate their optical parameters. Transmission electron microscopy measurements showed that ZnO thin films grown on p-InP (100) substrates were nanocrystalline. The dielectric function, the refractive indice, and the extinction coefficient of the ZnO thin films were determined as functions of the photon energy, and the energy gap of the ZnO nanocrystalline film was 3.38eV. These results can help to improve the understanding of the ZnO nanocrystalline thin film grown on p-InP (100) substrates for potential use in optoelectronic devices based on InP substrates. © 2003 Elsevier Ltd. All rights reserved.




Kim, T. W., Kwack, K. D., Kim, H. K., Yoon, Y. S., Bahang, J. H., & Park, H. L. (2003). Optical parameters in ZnO nanocrystalline textured films grow on p-InP (100) substrates. Solid State Communications, 127(9–10), 635–638. https://doi.org/10.1016/S0038-1098(03)00565-9

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