Optimization of ClusterCarbon™ process parameters for strained Si lattice

  • Sekar K
  • Krull W
  • Horsky T
 et al. 
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Abstract

We present here the substitutional carbon dependence of ClusterCarbon implant energy and dose, and anneal parameters such as solid phase epitaxial regrowth (SPER) temperature and various high temperature millisecond flash anneal conditions. With a multiple implant sequence of carbon implants one can obtain a fairly uniform carbon profile and we show that it provides better carbon substitution [C]subwhen compared to a single implant. It is been established that optimizing the percentage of [C]subrequires an SPER anneal temperature 2%. For a given millisecond anneal and for implants with various energies and doses we show that the percentages of [C]subincreases linearly with the fraction of carbon dopants within the amorphous layer. © 2008 Elsevier B.V. All rights reserved.

Author-supplied keywords

  • ClusterCarbon
  • HRXRD
  • Ion implant
  • Molecular implants
  • SiC
  • Strain

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Authors

  • Karuppanan Sekar

  • Wade A. Krull

  • Thomas N. Horsky

  • Thomas Feudel

  • Christian Krüger

  • Stefan Flachowsky

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