Compositionally graded InxGa1-xP (x = 0.48 → x = 1) metamorphic layers have been grown on GaAs substrate by solid source molecular beam epitaxy using a valved phosphorus cracker cell. Three series of samples were grown to optimize the growth temperature, V/III ratio and grading rate of the buffer layer. X-ray diffraction (XRD) and photoluminescence (PL) were used to characterize the samples. The following results have been obtained: (1) XRD measurement shows that all the samples are nearly fully strain relaxed and the strain relaxation ratio is about 96%; (2) the full-width at half-maximum (FWHM) of the XRD peak shows that the sample grown at 480°C offers better material quality; (3) the grading rate does not influence the FWHM of XRD and PL results; (4) adjustment of the V/III ratio from 10 to 20 improves the FWHM of XRD peak, and the linewidth of PL peak is close to the data obtained for the lattice-matched sample on InP substrate. The optimization of growth conditions will benefit the metamorphic HEMTs grown on GaAs using graded InGaP as buffer layers. © 2002 Elsevier Science Ltd. All rights reserved.
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