Macroscopic effects are observed on MOS transistors after low temperature ionizing irradiation : the dose dependence of the threshold voltage shift and significantly a novel dose rate dependence. The microscopic origin of these effects is thorougly discussed. A quantitative modeling of the experimental results is made and we find that the subsequent formulation allows a determination of the hole stochastic transport parameter α in the gate oxide. The threshold voltage shift as a function of dose rate can then be predicted. © 1995.
Fourches, N., Delagnes, E., Le Meur, L. P., Orsier, E., de Pontcharra, J., & Truche, R. (1995). Origin of macroscopic effects on hardened Mosfet devices following low temperature (90 K) ionizing irradiation. Microelectronic Engineering, 28(1–4), 75–78. https://doi.org/10.1016/0167-9317(95)00019-5