Origin of macroscopic effects on hardened Mosfet devices following low temperature (90 K) ionizing irradiation

  • Fourches N
  • Delagnes E
  • Le Meur L
 et al. 
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Abstract

Macroscopic effects are observed on MOS transistors after low temperature ionizing irradiation : the dose dependence of the threshold voltage shift and significantly a novel dose rate dependence. The microscopic origin of these effects is thorougly discussed. A quantitative modeling of the experimental results is made and we find that the subsequent formulation allows a determination of the hole stochastic transport parameter α in the gate oxide. The threshold voltage shift as a function of dose rate can then be predicted. © 1995.

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