Macroscopic effects are observed on MOS transistors after low temperature ionizing irradiation : the dose dependence of the threshold voltage shift and significantly a novel dose rate dependence. The microscopic origin of these effects is thorougly discussed. A quantitative modeling of the experimental results is made and we find that the subsequent formulation allows a determination of the hole stochastic transport parameter α in the gate oxide. The threshold voltage shift as a function of dose rate can then be predicted. © 1995.
Mendeley saves you time finding and organizing research
Choose a citation style from the tabs below