Photoelectrochemical study of ZnIn 2Se 4 electrodes fabricated using selenization of RF magnetron sputtered Zn-In metal precursors

  • Cheng K
  • Cheng Y
  • Fan M
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Polycrystalline ZnIn2Se4samples are grown on glass substrates and fluorine-doped tin oxide coated glass substrates using the selenization of radio-frequency magnetron sputtered Zn-In metal alloys. The effect of the [Zn]/[Zn + In] molar ratio in the metal alloys on the physical and photoelectrochemical properties of the samples is investigated. X-ray diffraction patterns of samples reveal that the samples are polycrystalline tetragonal ZnIn2Se4. The thicknesses and direct band gaps of the samples are in the ranges of 1.15-1.44 μm and 1.68-1.81 eV, as obtained from surface profile measurements and transmittance/reflectance spectra, respectively. The flat-band potentials of the samples in 0.6 M K2SO3electrolyte are in the range of -0.41 to -0.95 V vs. an Ag/AgCl reference electrode. The highest photoelectrochemical response of samples was 1.84 mA/cm2at an external potential of +1.0 V vs. an Ag/AgCl electrode in 0.6 M K2SO3solution under illumination from a 300 W Xe lamp system with the light intensity set at 100 mW/cm2. Highlights: ZnIn2Se4is deposited on substrates using selenization of of Zn-In precursors. All samples are polycrystalline tetragonal ZnIn2Se4. The direct energy band gaps of the samples were in the range of 1.68-1.81 eV. Sample with [Zn]/[Zn + In] ratio of 0.24 has a maximum PEC response. © 2012 Hydrogen Energy Publications, LLC.

Author-supplied keywords

  • Hydrogen production
  • Magnetron sputtering
  • Photoelectrode
  • ZnIn2Se4

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