A photoluminescence (PL) study of OMVPE grown AlxGa1-xAs films of different alloy composition and doping is presented on epitaxial films deposited on various substrates. The PL spectrum is shown to have a strong dependence on the substrate for a fixed set of growth conditions. Data is given for Al0.43Ga0.57films which are unintentionally doped, Zn doped and Si doped. Substrates used in this study include thick LPE buffer layers ( ≈75 μm) of both GaAs and AlxGa1-xAs (x ∼ 0.25) as well as Si and undoped bulk substrates. The results indicate that high quality surface morphologies are obtained on films deposited on AlGaAs substrates exposed to air when a brief in situ vapor etch is used prior to growth. © 1984.
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