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Transparent and conducting thin films of SnO2and SnO2:Sb were produced on soda glass substrates by photolysis in air of pure and antimony-doped SnI2films at a relatively low temperature of 140°C. The behaviour of the transmittance T in the visible range was investigated, and the allowed direct energy gap was determined to be 3.76eV (SnO2) and 3.83eV (SnO2:Sb). The crystallinity, transmittance and conductivity of the films were observed to increase with annealing in either air or vacuum. The dependence of the resistivity and optical transmission on the film thickness were determined. The optimum thickness for high transmittance and lowest resistivity is about 700 nm for SnO2(ρ{variant} = 3 x 10-2Ωcm and T=90%) and 600 nm for SnO2:Sb (ρ{variant} = 1.6 x 10-3Ωcm and T=93%). © 1986.




Kuku, T. A. (1986). Physical properties of thin SnO2and SnO2:Sb films obtained by a photolytic method. Thin Solid Films, 142(2), 241–250. https://doi.org/10.1016/0040-6090(86)90008-8

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