Plasma immersion ion implantation (PIII) is a technique which promises high dose rate implantation and compatibility with large-area processing. When a large negative bias is applied to the substrate which is immersed inside a high ion-density plasma, all ion species present will be implanted without ion mass selection. Innovations of this techniques include: implantation time independent of implantation area, capability to perform concomitant deposition and implantation, and simplicity of machine design and maintenance. This paper reports the modeling of PIII plasma dynamics and several demonstrated semiconductor processing applications such as plasma doping, subsurface material synthesis, ion beam mixing, microcavity engineering, and surface modifications. Several processing issues such as substrate charging and dosimetry will also be discussed.
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