PMOSFET anti-fuse using GIDL-induced-HEIP mechanism

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Abstract

We propose a novel electrical fuse (e-fuse) program procedure using shallow trench isolation (STI) edge trapping mechanism of PMOSFET by applying AC pulses. We obtained flash characteristics using conventional PMOSFET structure, when injected AC pulse on source node under off-state condition (Vg= high, Vd= low). In order to verify programming, double hump characteristics and thermal conduction analysis are introduced. © 2010 Elsevier Ltd. All rights reserved.

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Seo, J. Y., Seok, J. E., Kim, W. S., Cha, N. H., Kang, J. S., & So, B. S. (2010). PMOSFET anti-fuse using GIDL-induced-HEIP mechanism. In Microelectronics Reliability (Vol. 50, pp. 1309–1311). https://doi.org/10.1016/j.microrel.2010.07.053

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