Porous alumina as low-ε insulator for multilevel metallization

Citations of this article
Mendeley users who have this article in their library.
Get full text


Electrochemical anodizing technique was used to form an interlevel alumina insulator for multilevel aluminum metallization. The low dielectric constant of about 2.4 was reached by chemical etching of porous alumina films in anodizing solution. The interlevel insulator based on porous alumina had the following parameters measured: the breakdown voltage was more than 400 V, the leakage current at 15 V applied voltage was less than 10-9A/cm2. The developed processing technique was tested for CMOS submicron technology. The fabricated aluminum-porous alumina structure demonstrated a good chemical and thermal stability, excellent adhesion to underlying and top layers.




Lazarouk, S., Katsouba, S., Leshok, A., Demianovich, A., Stanovski, V., Voitech, S., … Ponomar, V. (2000). Porous alumina as low-ε insulator for multilevel metallization. Microelectronic Engineering, 50(1–4), 321–327. https://doi.org/10.1016/S0167-9317(99)00298-1

Register to see more suggestions

Mendeley helps you to discover research relevant for your work.

Already have an account?

Save time finding and organizing research with Mendeley

Sign up for free