Preparation and characterization of GaN films by radio frequency magnetron sputtering and carbonized-reaction technique

  • Zhang C
  • Chen W
  • Bian L
 et al. 
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Abstract

Radio frequency magnetron sputtering/post-carbonized-reaction technique was adopted to prepare good-quality GaN films on Al2O3(0 0 0 1) substrates. The sputtered Ga2O3film doped with carbon was used as the precursor for GaN growth. X-ray diffraction (XRD) pattern reveals that the film consists of hexagonal wurtzite GaN. X-ray photoelectron spectroscopy (XPS) shows that no oxygen can be detected. Electrical and room-temperature photoluminescence measurements show that good-quality polycrystalline GaN films were successfully grown on Al2O3(0 0 0 1) substrates. © 2005 Elsevier B.V. All rights reserved.

Author-supplied keywords

  • Carbonized-reaction
  • Gallium Oxide
  • Gallium nitride films

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Authors

  • C. G. Zhang

  • W. D. Chen

  • L. F. Bian

  • S. F. Song

  • C. C. Hsu

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