Radio frequency magnetron sputtering/post-carbonized-reaction technique was adopted to prepare good-quality GaN films on Al2O3(0 0 0 1) substrates. The sputtered Ga2O3 film doped with carbon was used as the precursor for GaN growth. X-ray diffraction (XRD) pattern reveals that the film consists of hexagonal wurtzite GaN. X-ray photoelectron spectroscopy (XPS) shows that no oxygen can be detected. Electrical and room-temperature photoluminescence measurements show that good-quality polycrystalline GaN films were successfully grown on Al2O 3(0 0 0 1) substrates. © 2005 Elsevier B.V. All rights reserved.
Zhang, C. G., Chen, W. D., Bian, L. F., Song, S. F., & Hsu, C. C. (2006). Preparation and characterization of GaN films by radio frequency magnetron sputtering and carbonized-reaction technique. Applied Surface Science, 252(6), 2153–2158. https://doi.org/10.1016/j.apsusc.2005.03.209